|
![]() |
货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
JD200528092125 | Bi2O2Se 硒氧铋晶体 | 大于20平方毫米 | -- | 5120元 | 咨询客服 | 3天 |
JD200528092056 | Bi2O2Se 硒氧铋晶体 | 大于10平方毫米 | -- | 3120元 | 咨询客服 | 3天 |
性状: | 晶体大小: 3~10 mm 晶体种类: Magnetic semiconductor,红外半导体,拓扑材料,热电材料 纯度: >99.999 % 表征方法: EDS,SEM,Raman bandgap: 0.4 eV |
质量标准: | 参考文献: 1, Fu, Qundong, et al. "Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates." Advanced Materials 31.1 (2019): 1804945. 2,Ying, Jianghua, et al. "Magnitude and spatial distribution control of the supercurrent in Bi2O2Se-based Josephson junction." Nano Letters (2020). 3,Zhang, Ziyang, et al. "Truly Concomitant and Independently Expressed Short‐and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor." Advanced Materials 31.3 (2019): 1805769. 4,Tan, Xing, et al. "Synergistical Enhancement of Thermoelectric Properties in n‐Type Bi2O2Se by Carrier Engineering and Hierarchical Microstructure." Advanced Energy Materials 9.31 (2019): 1900354. |