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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200529090701 | NiTe2晶体 | 大于25毫克 | -- | 5120元 | 咨询客服 | 3天 |
| JD200529090508 | NiTe2晶体 | 大于10毫克 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name NiTe2 性质分类 Electrical properties 拓扑绝缘体 Topological Insulators 禁带宽度 Bangap 0 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation 易 Easy |
| 质量标准： | 参考文献 1，Nguyen, V. T., et al. "The structure and electrical properties of liquid semiconductors. I. The structure of liquid NiTe2 and NiTe." Journal of Physics C: Solid State Physics 15.22 (1982): 4627. 2， Zhao, Bei, et al. "Synthetic control of two-dimensional NiTe2 single crystals with highly uniform thickness distributions." Journal of the American Chemical Society 140.43 (2018): 14217-14223. 3，Xu, Chunqiang, et al. "Topological type-II Dirac fermions approaching the Fermi level in a transition metal dichalcogenide NiTe2." Chemistry of materials 30.14 (2018): 4823-4830. 4，Monteiro, João Frederico Haas Leandro, et al. "Synthesis and microstructure of NiTe2." Journal of Crystal Growth 478 (2017): 129-133. |
