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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200529091532 | Pb2Bi2Se5晶体 | 大于25毫克 | -- | 5120元 | 咨询客服 | 3天 |
| JD200529091505 | Pb2Bi2Se5晶体 | 大于10毫克 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name Pb2Bi2Se5 性质分类 Electrical properties 拓扑绝缘体，热电材料，红外材料 Topological Insulators 禁带宽度 Bangap 0.428 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation 易 Easy |
| 质量标准： | 参考文献 1，Silkin, I. V., et al. "Three-and two-dimensional topological insulators in Pb 2 Sb 2 Te 5, Pb 2 Bi 2 Te 5, and Pb 2 Bi 2 Se 5 layered compounds." JETP letters 94.3 (2011): 217. 2，Zemskov, V. S., et al. "Thermoelectric materials with low heat conductivity based on PbSe-Bi 2 Se 3 compounds." Inorganic Materials: Applied Research 2.5 (2011): 405-413. 3，Neupane, Madhab, et al. "Topological surface states and Dirac point tuning in ternary topological insulators." Physical Review B 85.23 (2012): 235406. |
