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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200529093256 | Sb2Te2Se晶体 | 大于25毫克 | -- | 5120元 | 咨询客服 | 3天 |
| JD200529093241 | Sb2Te2Se晶体 | 大于10毫克 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name Sb2Te2Se 性质分类 Electrical properties
IR Semiconductor，TI Bangap 0 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation
Easy Stable |
| 质量标准： | 参考Sb2Te3性质 Kanagaraj, M., et al. "Structural, magnetotransport and Hall coefficient studies in ternary Bi2Te2Se, Sb2Te2Se and Bi2Te2S tetradymite topological insulating compounds." Journal of Alloys and Compounds 794 (2019): 195-202. Govindhan, Gopi, et al. "Studies on Shubnikov-de Hass oscillations in p-Sb2Te2Se topological insulator." Materials Research Bulletin 124 (2020): 110733. Qu, Hengze, et al. "Ballistic Quantum Transport of Sub‐10 nm 2D Sb2Te2Se Transistors." Advanced Electronic Materials 5.12 (2019): 1900813. |
