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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200529094531 | Te晶体 | 大于25毫克 | -- | 5120元 | 咨询客服 | 3天 |
| JD200529094531 | Te晶体 | 大于10毫克 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name SbTe 性质分类 Electrical properties 拓扑绝缘体，热电材料，相变材料 Topological Insulators Bangap ~0.043 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation 易 Easy |
| 质量标准： | 参考文献 1，Raoux, Simone, et al. "Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb." Journal of applied physics 101.4 (2007): 044909. 2，Horie, Michikazu, et al. "Material characterization and application of eutectic SbTe-based phase-change optical recording media." Optical Data Storage 2001. Vol. 4342. International Society for Optics and Photonics, 2002. 3，Oomachi, Noritake, et al. "Recording characteristics of Ge doped eutectic SbTe phase change discs with various compositions and its potential for high density recording." Japanese journal of applied physics 41.3S (2002): 1695. |
